By Steve, C. Cripps, Steve C. Cripps, Steve C. Cripps
The writer is a professional in RF amplifiers. during this e-book he expands upon the guidelines provided in his prior e-book which was once a top vendor.
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Probably the least extreme case, in terms of neglect, has been the Envelope Elimination and Restoration (EER) method; this is widely attributed to Kahn, who published a paper on the technique  in the single sideband (SSB) era of the early 1950s. In fact, the application of high-level amplitude modulation (AM) to a Class C RFPA was common practice in the tube era, as any reference to contemporary ham radio literature will confirm. Kahns innovation was essentially the generation of a constant-amplitude, phase-modulated signal component which could be amplified using a nonlinear PA.
At 2 GHz, a typical Si BJT device will have an input which is dominated by a large junction capacitance. Although this makes the fundamental match a challenging design problem, it does have an upside in that higher harmonics will be effectively shorted out. A 40-GHz heterojunction bipolar transistor (HBT) device, however, will need assistance in the form of external harmonic circuitry. 11). The BJT device appears to be a ready-made example of the novel principle that Class AB PAs can be more linear if the device has the right kind of nonlinearity in its transfer characteristic.
3 (Vq < 0 cases), it is clear that the peaking device periphery must be scaled up, by at least the G factor. On the other hand, the requirement for a lower breakpoint value does somewhat alleviate the periphery requirements of the peaking device if a simple Class C approach is used. 8 shows such a realization, which now allows the efficiency to be computed. 7, some adjustment has to be made to the Zo value in order to keep the main device voltage below the allowable maximum value. The efficiency curve still looks quite attractive, despite an inevitably deeper dip in the mid-backoff region.